Thermal Annealing of Graphene Implanted with Mn at Ultralow Energies: From Disordered and Contaminated to Nearly Pristine Graphene

نویسندگان

چکیده

Ultralow-energy (ULE) ion implantation is increasingly being explored as a method to substitutionally dope graphene. However, complex implantation-related effects such defect creation and surface contamination, how they can be minimized by thermal annealing, remain poorly understood. Here, we address these open questions taking the model case epitaxial graphene grown on Cu(111), which was subsequently ULE implanted with Mn at 40 eV then studied function of annealing temperature under ultrahigh vacuum. While significant cleaning occurs temperatures low 200 °C, recovery from implantation-induced disorder requires least 525 °C. Upon high-temperature in 600–700 °C range, atoms that were incorporated upon intercalated species (between Cu surface) experience diffusion into layer, creating subsurface alloy. Annealing 700 restored nearly pristine state, well-ordered lattice substitutional well-defined Dirac cone. In addition insight physicochemical induced our results provide useful guidelines for future experimental studies modified (e.g., doped) using implantation.

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ژورنال

عنوان ژورنال: Journal of Physical Chemistry C

سال: 2022

ISSN: ['1932-7455', '1932-7447']

DOI: https://doi.org/10.1021/acs.jpcc.2c00855